View EL2075_1211168.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

note : all information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publi cation; however, this data sheet cannot be a ?controlled document?. current revisions, if any, to these specifications are maintained at the factory and are available upon your request. we recommend checking the revision level befor e finalization of your design documentation. ? 2001 elantec semiconductor, inc. e l 2 0 7 5 c general description the EL2075c is a precision voltage-feedback amplifier featuring a 2ghz gain-bandwidth product, fast settling time, excellent differential gain and differential phase performance, and a minimum of 50ma out- put current drive over temperature. the EL2075c is gain-of-10 stable with a -3db bandwidth of 400mhz at a v = +10. it has a very low 200v of input offset voltage, only 2a of input bias current, and a fully symmetrical differential input. like all voltage-feedback operational amplifiers, the EL2075c allows the use of reactive or non-linear components in the feedback loop. this combination of speed and versatility makes the EL2075c the ideal choice for all op-amp applications at a gain of 10 or greater requiring high speed and precision, including active filters, integrators, sample- and-holds, and log amps. the low distortion, high output current, and fast settling makes the EL2075c an ideal amplifier for signal-process- ing and digitizing systems. connection diagrams dip and so package features ? 2ghz gain-bandwidth product ? gain-of-10 stable ? conventional voltage-feedback topology ? low offset voltage = 200v ? low bias current = 2a ? low offset current = 0.1a ? output current = 50ma over temperature ? fast settling = 13ns to 0.1% applications ? active filters/integrators ? high-speed signal processing ? adc/dac buffers ? pulse/rf amplifiers ? pin diode receivers ? log amplifiers ? photo multiplier amplifiers ? high speed sample-and-holds ordering information part no. temp. range package outline # EL2075cn 0c to +75c 8-pin p-dip mdp0031 EL2075cs 0c to +75c 8-lead so mdp0027 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier s e p t e m b e r 2 6 , 2 0 0 1
2 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c absolute maximum ratings (t a = 25c) supply voltage (v s ) 7v output current output is short-circuit protected to ground, however, maximum reliability is obtained if i out does not exceed 70ma. common-mode input v s differential input voltage 5v thermal resistance q ja = 95c/w p-dip q ja = 175c/w so-8 operating temperature 0c to +75c junction temperature 175c storage temperature -60c to +150c note: see el2071/el2171 for thermal impedance curves. important note: all parameters having min/max specifications are guaranteed. typ values are for information purposes only. unless otherwise note d, all tests are at the specified temperature and are pulsed tests, therefore: t j = t c = t a . open loop dc electrical characteristics v s = 5v, r l = 100 w , unless otherwise specified parameter description test conditions temp min typ max unit v os input offset voltage v cm = 0v 25c 0.2 1 mv t min , t max 2.5 mv tcv os average offset voltage drift [1] all 8 v/c i b input bias current v cm = 0v all 2 6 a i os input offset current v cm = 0v 25c 0.1 1 a t min , t max 2 a psrr power supply rejection ratio [2] all 70 90 db cmrr common mode rejection ratio [3] all 70 90 db i s supply current?quiescent no load 25c 21 25 ma t min , t max 25 ma r in (diff) r in (differential) open-loop 25c 15 k w c in (diff) c in (differential) open-loop 25c 1 pf r in (cm) r in (common-mode) 25c 1 m w c in (cm) c in (common-mode) 25c 1 pf r out output resistance 25c 50 m w cmir common-mode input range 25c 3 3.5 v t min , t max 2.5 v i out output current all 50 70 ma v out output voltage swing no load all 3.5 4 v v out 100 output voltage swing 100 w all 3 3.6 v v out 50 output voltage swing 50 w all 2.5 3.4 v a vol 100 open-loop gain 100 w 25c 1000 2800 v/v t min , t max 800 v/v a vol 50 open-loop gain 50 w 25c 800 2300 v/v t min , t max 600 v/v en@ > 1mhz noise voltage 1?100mhz 25c 2.3 nv/ ? hz in@ > 100 khz noise current 100k?100mhz 25c 3.2 pa/ ? hz 1. measured from t min , t max . 2. v cc = 4.5v to 5.5v. 3. v in = 2.5v, v out = 0v
3 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c closed loop ac electrical characteristics v s = 5v, a v = +20, rf = 1500 w , r l = 100 w unless otherwise specified. parameter description test conditions temp min typ max unit ssbw -3db bandwidth (v out = 0.4v pp ) a v = +10 25c 400 mhz a v = +20 25c 150 200 mhz t min , t max 125 mhz a v = +50 25c 40 mhz gbwp gain-bandwidth product a v = +100 25c 2.0 ghz lsbwa -3db bandwidth v out = 2v pp [1] all 80 128 mhz lsbwb -3db bandwidth v out = 5v pp [1] all 32 50 mhz gfpl peaking (<50mhz) v out = 0.4v pp 25c 0 0.5 db t min , t max 0.5 db gfph peaking (>50mhz) v out = 0.4v pp 25c 0 1 db t min , t max 1 db gfr rolloff (<100mhz) v out = 0.4v pp 25c 0.1 0.5 db t min , t max 0.5 db lpd linear phase deviation (<100mhz) v out = 0.4v pp all 1 1.8 pm phase margin a v = +10 25c 60 tr1, tf1 rise time, fall time 0.4v step, a v = +10 25c 1.2 ns tr2, tf2 rise time, fall time 5v step, a v = +10 25c 6 ns ts1 settling to 0.1% (a v = -20) 2v step 25c 13 ns ts2 settling to 0.01% (a v = -20) 2v step 25c 25 ns os overshoot 2v step, a v = +10 25c 10 % sr slew rate 2v step, a v = +10 all 500 800 v/s distortion [2] hd2 2nd harmonic distortion @ 20mhz, a v = +20 25c -40 -30 dbc t min , t max -30 dbc hd3 3rd harmonic distortion @ 20mhz, a v = +20 25c -65 -50 dbc t min , t max -50 dbc 1. large-signal bandwidth calculated using lsbw = slew rate / (2? ? v peak ). 2. all distortion measurements are made with v out = 2v pp , r l = 100?.
4 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c typical performance curves non-inverting frequency response inverting frequency response frequency response for various r l s equivalent input noise output voltage swing vs frequency open loop gain and phase psrr, cmrr, and closed-loop r o frequency 2nd and 3rd harmonic distortion vs frequency 2-tone, 3rd order intermodulation intercept
5 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c series resistor and resulting bandwidth vs capacitive load settling time vs output voltage change settling time vs closed-loop gain supply current vs temperature bias and offset current vs input common-mode voltage common-mode rejection ratio vs input common-mode voltage bias and offset current vs temperature offset voltage vs temperature a vol , psrr, and cmrr vs temperature
6 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c small signal transient response large signal transient response
7 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c equivalent circuit burn-in circuit all packages use the same schematic
8 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c applications information product description the EL2075c is a wideband monolithic operational amplifier built on a high-speed complementary bipolar process. the EL2075c uses a classical voltage-feedback topology which allows it to be used in a variety of appli- cations requiring a noise gain 3 10 where current- feedback amplifiers are not appropriate because of restrictions placed upon the feedback element used with the amplifier. the conventional topology of the EL2075c allows, for example, a capacitor to be placed in the feedback path, making it an excellent choice for applications such as active filters, sample-and-holds, or integrators. similarly, because of the ability to use diodes in the feedback network, the EL2075c is an excellent choice for applications such as log amplifiers. the EL2075c also has excellent dc specifications: 200v, v os , 2a i b , 0.1a i os , and 90db of cmrr. these specifications allow the EL2075c to be used in dc-sensitive applications such as difference amplifiers. furthermore, the current noise of the EL2075c is only 3.2 pa/ ? hz, making it an excellent choice for high-sen- sitivity transimpedance amplifier configurations. gain-bandwidth product the EL2075c has a gain-bandwidth product of 2ghz. for gains greater than 40, its closed-loop -3db bandwidth is approximately equal to the gain-bandwidth product divided by the noise gain of the circuit. for gains less than 40, higher-order poles in the amplifier's transfer function contribute to even higher closed loop band- widths. for example, the EL2075c has a -3db bandwidth of 400mhz at a gain of +10, dropping to 200mhz at a gain of +20. it is important to note that the EL2075c has been designed so that this ?extra? bandwidth in low-gain applications does not come at the expense of stability. as seen in the typical performance curves, the EL2075c in a gain of +10 only exhibits 1.5db of peaking with a 100 w load. output drive capability the EL2075c has been optimized to drive 50 w and 75 w loads. it can easily drive 6v pp into a 50 w load. this high output drive capability makes the EL2075c an ideal choice for rf and if applications. furthermore, the cur- rent drive of the EL2075c remains a minimum of 50ma at low temperatures. the EL2075c is current-limited at the output, allowing it to withstand momentary shorts to ground. however, power dissipation with the output shorted can be in excess of the power-dissipation capa- bilities of the package. capacitive loads although the EL2075c has been optimized to drive resistive loads as low as 50 w , capacitive loads will decrease the amplifier's phase margin which may result in peaking, overshoot, and possible oscillation. for opti- mum ac performance, capacitive loads should be reduced as much as possible or isolated via a series out- put resistor. coax lines can be driven, as long as they are terminated with their characteristic impedance. when properly terminated, the capacitance of coaxial cable will not add to the capacitive load seen by the amplifier. capacitive loads greater than 10pf should be buffered with a series resistor (rs) to isolate the load capacitance from the amplifier output. a curve of recommended rs vs cload has been included for reference. values of rs were chosen to maximize resulting bandwidth without additional peaking. printed-circuit layout as with any high-frequency device, good pcb layout is necessary for optimum performance. ground-plane con- struction is highly recommended, as is good power supply bypassing. a 1f?10f tantalum capacitor is recommended in parallel with a 0.01f ceramic capaci- tor. all lead lengths should be as short as possible, and all bypass capacitors should be as close to the device pins as possible. parasitic capacitances should be kept to an absolute minimum at both inputs and at the output. resistor values should be kept under 1000 w to 2000 w because of the rc time constants associated with the parasitic capacitance. metal-film and carbon resistors are both acceptable, use of wire-wound resistors is not recommended because of parasitic inductance. simi- larly, capacitors should be low-inductance for best performance. if possible, solder the EL2075c directly to the pc board without a socket. even high quality sockets
9 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c add parasitic capacitance and inductance which can potentially degrade performance. because of the degra- dation of ac performance due to parasitics, the use of surface-mount components (resistors, capacitors, etc.) is also recommended.
10 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c EL2075c macromodel * * connections: input * | -input * | | +vsupply * | | | -vsupply * | | | | output * | | | | | .subckt m2075c 3 2 7 4 6 * *input stage * ie 37 4 1ma r6 36 37 15 r7 38 37 15 rc1 7 30 200 rc2 7 39 200 q1 30 3 36 qn q2 39 2 38 qna ediff 33 0 39 30 1 rdiff 33 0 1 meg * * compensation section * ga 0 34 33 0 2m rh 34 0 500k ch 34 0 0.4 pf rc 34 40 50 cc 40 0 0.05 pf * * poles * ep 41 0 40 0 1 rpa 41 42 250 cpa 42 0 0.8 pf rpb 42 43 50 cpb 43 0 0.5 pf * * output stage * ios1 7 50 3.0ma ios2 51 4 3.0ma q3 4 43 50 qp q4 7 43 51 qn q5 7 50 52 qn q6 4 51 53 qp ros1 52 6 2 ros2 6 53 2 * * power supply current * ips 7 4 11.4ma * * models * .model qna npn(is800e-18 bf170 tf0.2ns) .model qn npn(is810e-18 bf200 tf0.2ns) .model qp pnp(is800e-18 bf200 tf0.2ns) .ends
11 EL2075c 2ghz gbwp gain-of-10 stable operational amplifier e l 2 0 7 5 c general disclaimer specifications contained in this data sheet are in effect as of the publication date shown. elantec, inc. reserves the right to make changes in the cir- cuitry or specifications contained herein at any time without notice. elantec, inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. warning - life support policy elantec, inc. products are not authorized for and should not be used within life support systems without the specific written consent of elantec, inc. life support systems are equipment intended to sup- port or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. users con- templating application of elantec, inc. products in life support systems are requested to contact elantec, inc. factory headquarters to establish suitable terms & conditions for these applications. elan- tec, inc.?s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. s e p t e m b e r 2 6 , 2 0 0 1 printed in u.s.a. elantec semiconductor, inc. 675 trade zone blvd. milpitas, ca 95035 telephone: (408) 945-1323 (888) elantec fax: (408) 945-9305 european office: +44-118-977-6020 japan technical center: +81-45-682-5820

▲Up To Search▲

Price & Availability of EL2075

	To Download EL2075 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .